发明名称 CHEMICAL VAPOR DEPOSITION DEVICE FOR FABRICATING SEMICONDUCTOR DEVICE
摘要 PURPOSE: A chemical vapor deposition device for fabricating a semiconductor device is provided to prevent degradation of a liquid flow controller by removing a chemical stagnated in a line of the liquid flow controller. CONSTITUTION: A chemical vapor deposition device for fabricating a semiconductor device comprises a liquid flow controller. The liquid crystal controller controls flow-in amount of a chemical. An air valve and a doped/undoped valves are installed at a rear end of the liquid flow controller. The device further comprises a divert valve for removing the chemical and a pump for performing a pumping process. A valve is installed at a front end of the device to remove the chemical stagnated in the liquid flow controller and a line of the front end.
申请公布号 KR20000019936(A) 申请公布日期 2000.04.15
申请号 KR19980038294 申请日期 1998.09.16
申请人 SAMSUNG ELECTRONICS CO., LTD. 发明人 LEE, GYEONG SEOP;CHOI, YONG TAE
分类号 H01L21/20;(IPC1-7):H01L21/20 主分类号 H01L21/20
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