发明名称 |
CHEMICAL VAPOR DEPOSITION DEVICE FOR FABRICATING SEMICONDUCTOR DEVICE |
摘要 |
PURPOSE: A chemical vapor deposition device for fabricating a semiconductor device is provided to prevent degradation of a liquid flow controller by removing a chemical stagnated in a line of the liquid flow controller. CONSTITUTION: A chemical vapor deposition device for fabricating a semiconductor device comprises a liquid flow controller. The liquid crystal controller controls flow-in amount of a chemical. An air valve and a doped/undoped valves are installed at a rear end of the liquid flow controller. The device further comprises a divert valve for removing the chemical and a pump for performing a pumping process. A valve is installed at a front end of the device to remove the chemical stagnated in the liquid flow controller and a line of the front end.
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申请公布号 |
KR20000019936(A) |
申请公布日期 |
2000.04.15 |
申请号 |
KR19980038294 |
申请日期 |
1998.09.16 |
申请人 |
SAMSUNG ELECTRONICS CO., LTD. |
发明人 |
LEE, GYEONG SEOP;CHOI, YONG TAE |
分类号 |
H01L21/20;(IPC1-7):H01L21/20 |
主分类号 |
H01L21/20 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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