METHOD FOR FORMING MULTI-LAYERED LINE OF SEMICONDUCTOR DEVICE

摘要

PURPOSE: A method for forming multi-layered line of a semiconductor device is provided to prevent the burying phenomenon due to the over polishing through a simple process. CONSTITUTION: A CMP(Chemical Mechanical Polishing) is performed after forming an insulation layer having a higher polishing ratio than an interlayer insulation film between the interlayer insulation film and a Ti/TiN film. The method comprises the process of stacking a first insulation film(120) and a second insulation film(130) having a different etching selectivity each other on a semiconductor substrate(110) in sequence where an integrated circuit is formed, and forming a pattern on an insulation film on a fixed area where a metallic line is to be buried. After forming a pattern on the second insulation film, a metal is stacked on the front of the metallic line pattern. A number of metal layers separated electrically by the first insulation film each other are formed by removing a part of the metal and the second insulation film with CMP. Then, a number of top electrodes connected electrically are formed so as to correspond to each of the metal layers.