An epitaxial growth furnace for growing an epitaxial layer on a semiconductor wafer by CVD in reactive chamber includes a wafer holder, which comprises an opening for exposing the area to be processed of the semiconductor wafer, a flange for engagement with the whole chamfered edge of the area to be processed of the semiconductor wafer, and a plurality of jaws to be engaged detachably with the border of the semiconductor wafer on the back of the area to be processed.
申请公布号
WO0007228(A8)
申请公布日期
2000.04.13
申请号
WO1999JP03993
申请日期
1999.07.26
申请人
SUPER SILICON CRYSTAL RESEARCH INSTITUTE CORP.;IMAI, MASATO;NAKAHARA, SHINJI;MAYUSUMI, MASANORI;INOUE, KAZUTOSHI;GIMA, SHINTOSHI