System and method for the monolithic intergration of a laser light emitting device and a photodetector for low bias voltage operation

摘要

A light emitting device (120) and photodetector (110) combination having a structure where the layer of the photodetector (111) that contacts the light emitting device (120) has a semiconductor conductivity type polarity opposite that of the light emitting device. This configuration results in a light emitting device and photodetector structure that has a very low bias voltage requirement. Additionally, by shunting (255) any current flowing through the junction (215) formed where the light emitting device (120) meets the photodetector (110), the bias voltage requirement is further reduced.