发明名称 |
METHOD OF MANUFACTURING COMPOUND SEMICONDUCTOR SINGLE CRYSTAL |
摘要 |
<p>A method for producing a compound semiconductor single crystal, comprises the steps of: using a crucible having a bottom, a cylindrical shape, a diameter increasing portion having a reversed conical shape in a lower end side of the crucible, and a set portion for a seed crystal in a center of the bottom of the diameter increasing portion; setting a seed crystal in the seed crystal set portion of the crucible; putting a raw material of the compound semiconductor and an encapsulating material into the crucible; enclosing the crucible in an inner container; thereafter setting the inner container in a vertical type furnace; heating the raw material and the encapsulating material by a heating means to melt; and solidifying the obtained raw material melt from the seed crystal toward an upper side with annealing the raw material melt from a lower side to grow a single crystal of the compound semiconductor; wherein a rate of crystal growth at the diameter increasing portion of the crucible is made not less than 20mm/hr during the crystal is grown. <IMAGE></p> |
申请公布号 |
EP0992618(A1) |
申请公布日期 |
2000.04.12 |
申请号 |
EP19990910741 |
申请日期 |
1999.03.29 |
申请人 |
JAPAN ENERGY CORPORATION |
发明人 |
ASAHI, TOSHIAKI;KAINOSHO, KEIJI;NOZAKI, TATSUYA;SATO, KENJI |
分类号 |
C30B11/00;(IPC1-7):C30B11/00;C30B29/40 |
主分类号 |
C30B11/00 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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