| 摘要 |
PROBLEM TO BE SOLVED: To provide a semiconductor device, which is excellent in inhibiting a short-channel effect. SOLUTION: A gate electrode 4 and risen source and drain parts 7, which are positioned on the sides of the electrode 4, are formed on a silicon substrate 1, second sidewall spacers 8, which lie over on the end parts of the source and drain parts 7, are respectively formed on the sidewalls of the electrode 4 and phosphorus ions are introduced in the parts 7 and the parts, which are positioned under the parts 7, of the surface of the substrate 1 using these spacers 8 as masks. In this state, a heat treatment is performed, whereby phosphorus is diffused extending over from the parts 7 to the parts of the surface of the substrate 1 and a shallow junction of source and drain diffused regions 5 are formed. By such a way, the regions 5 are respectively constituted of a shallow junction of an N+ layer 5a and a deep junction of an N+ layer 5b in the state corresponding to phosphorus impurity concentration distributions. After that, the parts 7 are silicified.
|
