| 摘要 |
PROBLEM TO BE SOLVED: To provide a method of manufacturing a semiconductor device, which causes no short-circuit between a gate electrode and a contact member and can also meet to miniaturization of the device. SOLUTION: A gate insulating film 2, a gate electrode 3a and a protective layer 4a on a gate are formed on an Si substrate 1 and thereafter, lightly doped source and drain regions 6 are formed on the substrate 1. A first sidewall 15a and a second sidewall are respectively formed on the side surfaces of the electrode 3a and after that, heavily doped source and drain regions 9 are formed on the substrate 1 by an ion implantation method using these sidewalls as masks. After the second sidewall is selectively removed, pocket implanted regions Rpo are formed in the substrate 1 and an entire surface protective film 12 is deposited. After that, deposition of an interlayer insulating film 10, formation of a contact hole Hct to reach the drain region 9 and formation of a plug electrode 11 are conducted. As the second sidewall is removed at the time of deposition of the film 12, the part between the electrode 3a and the film 12 is not filled with the film 12.
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