发明名称 |
SOLID-STATE IMAGE SENSING DEVICE |
摘要 |
PROBLEM TO BE SOLVED: To provide a solid-state image sensing device with a full frame transfer(FFT) or frame transfer(FT) type CCD capable of a high speed charge transfer as a surface incidence type. SOLUTION: Light receiving parts 1 of an FFT type CCD or FT type CCD have polycrystalline Si transfer electrodes having a high wiring resistance, compared with a metal one and metal-made or metal silicide-made sub-electrodes 11-19 separate from them which are disposed obliquely to the transfer electrodes or otherwise in a different constitution or shape from the transfer electrodes, so as to essentially minimize the area covered with the transfer electrodes impermeable to lights. This makes an effective light reception/image sensing compatible with a high speed charge transfer with voltages fed to the transfer electrodes.
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申请公布号 |
JP2000101061(A) |
申请公布日期 |
2000.04.07 |
申请号 |
JP19980266456 |
申请日期 |
1998.09.21 |
申请人 |
HAMAMATSU PHOTONICS KK |
发明人 |
SUZUKI HISANORI;MIYAGUCHI KAZUHISA;YAMAMOTO AKINAGA |
分类号 |
H01L27/148;H04N5/335;H04N5/341;H04N5/3725;(IPC1-7):H01L27/148 |
主分类号 |
H01L27/148 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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