MANUFACTURE OF SEMICONDUCTOR DEVICE

摘要

PROBLEM TO BE SOLVED: To obtain a method of manufacturing a semiconductor device which can be scaled down with avoiding deteriorating the reliability of the element. SOLUTION: The manufacturing method comprises forming a polycrystalline Si film 3 through a gate oxide film 2 on a semiconductor substrate 1, patterning a photo resist 6 on a forming region 4 of the polycrystalline Si film 3, implanting an impurity ion 7 in a non-forming region 5 of the polycrystalline Si film 3, using the photoresist 6 as a mask, heat-treating to diffuse the impurity ion 7 into the forming region 4, etching and removing the non-forming region 5 with the photoresist 6 used as a mask, and forming a gate electrode wiring 9.