| 摘要 |
<p>PROBLEM TO BE SOLVED: To provide a manufacturing method of semiconductor device having reduce masking steps in photolithography process. SOLUTION: This invention in related to the formation of a semiconductor device laminated on a substrate 1 including a step forming laminated bodies 2, 3, 4, 5 as well as a forming step of a circuit element by photolithography including the formation of an alignment mask, the reference pattern by the aperture of the alignment mask as well as another mask specifying the circuit element aligned with the reference pattern. Furthermore, this method has a step forming at least one circuit element 12 provided with electric insulating means on the peripheral region 11 besides, the alignment mask out of a plurality of masks specifying the laminated circuit elements in formed by the first mask specifying the peripheral insulating region 11 of the circuit element 12 while the reference pattern is formed by a pattern 20 formed by etching the same in the thickness not exceeding the thickness of the upperside layer 5 of a laminate of the peripheral insulating region 11 through the intermediary of the first mask. On the other hand, this invention is applied to the hyper-frequency monolithic integrated circuit.</p> |
