| 摘要 |
PROBLEM TO BE SOLVED: To separate easily a sapphire substrate with good reproducibility and to improve the heat dissipation property and leakage withstand voltage property of a semiconductor light-emitting element, by a method wherein a first electrode is provided on the end on one side of the ends of a laminated material formed by laminating a plurality of layers consisting of a nitride semiconductor layer, a second electrode is provided on the other end of the laminated material, and the thickness of the laminated material is specified. SOLUTION: An N-type GaN layer 15 is crystal-grown on a sapphire substrate via a lift-off layer by a hydride VPE method. The sapphire substrate is separated from the part of the lift-off layer to use the layer 15 as a substrate, and layers 24 to 30 are grown by an MOCVD method. Moreover, a ridge structure constituted using the current constricting layer 29 is formed by a photolithography technique using a photosensitive resist and a dry etching using reactive chlorine ions. The sapphire substrate can be separated, the mirror surface end surface of a laser can be stably formed and the oscillation characteristics of the laser can be improved. Moreover, by forming the thickness of the part of a semiconductor light-emitting element in a thickness of 20 μm or thinner, the luminescent points of the element and an element adjacent to the element come close to each other, the element is easily excited by light from an active layer of the element adjacent to the element and the luminous efficiency of the element is enhanced. |
