| 摘要 |
PROBLEM TO BE SOLVED: To provide a method of evaluating an epitaxial wafer for light emitting elements, whereby the essential lifetime can be quickly and measured nondestructively, independent of the exited carrier density and provide an epitaxial wafer having a more high light emitting efficiency. SOLUTION: An exiting light is irradiated on an epitaxial wafer sample 1 for light emitting elements to emit a photoluminescence light and a non- emissive light lifetime is derived from a change rate in the intensity of the photoluminescence light, when this intensity change rate is at a fixed value or less, thereby obtaining the nonemissive lifetime which does not depend on the excited carrier density. About the epitaxial wafer for light emitting elements, thus obtd. nonemissive lifetime is 20 ns or longer, or the quantity of Zn diffused in the active layer becomes within 1E13 atoms/cm2. |
