发明名称 MEMORY CHIP AND METHOD FOR DRIVING ROW LINE
摘要 PROBLEM TO BE SOLVED: To use large-zone driving/boot signal line without excessive power consumption by allowing a first active row factor signal to actuate a plurality of predecoders, and by allowing a second active row factor signal to select at least one decoder. SOLUTION: A row factor signal generator 18 and a driving/boot signal generator 20 are formed in an end periphery zone 14. According to an address being received by an address signal generator, a plurality of row factor signals are outputted to each row factor signal line. A first set of row factor signals determine which of a plurality of spare decoder output lines transfers the driving/boot signal. A second set of row factor signals select a spare decoder to be actuated to transmit the driving/boot signal to the spare decoder output line. Furthermore, another set of row factor signals select at least one decoder, receive the driving/boot signal of the spare decoder output line, and at the same time transfers the driving/boot signal to a selected word line.
申请公布号 JP2000100167(A) 申请公布日期 2000.04.07
申请号 JP19990310930 申请日期 1999.11.01
申请人 TEXAS INSTR INC <TI> 发明人 KERSH III DAVID V;CHILDERS JIMMIE D
分类号 G11C11/407;G11C5/02;G11C8/10;G11C8/12;G11C8/18;G11C11/401;G11C11/408;(IPC1-7):G11C11/407 主分类号 G11C11/407
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