发明名称 SUBSTRATE TREATING DEVICE
摘要 PROBLEM TO BE SOLVED: To prevent particles from adhering to the surface of a substrate in a device for performing treatments, such as film formation or etching on the substrate, such as a semiconductor wafer, using a plasma. SOLUTION: In a substrate treating device, having a treating chamber 1 of treating a substrate W, a load-lock chamber 2 and a carrying arm 7 which enters from the chamber 2 into the chamber 1 for carrying the substrate W, a dustproof cover 8 for covering this substrate W is mounted to the arm 7 in the vicinity of the upper part of the substrate W which is carried by the arm 7. According to this device, a substrate treating device capable of preventing particles from being adhered to the surface of the substrate which is the material to be treated can be provided, and the yield for the manufacture of a semiconductor device or the like is improved.
申请公布号 JP2000100786(A) 申请公布日期 2000.04.07
申请号 JP19980264818 申请日期 1998.09.18
申请人 FUJITSU LTD 发明人 KAMATA TAKESHI;ARIMOTO HIROSHI
分类号 H01L21/302;C23C14/56;C23F4/00;H01L21/205;H01L21/3065;(IPC1-7):H01L21/306 主分类号 H01L21/302
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