发明名称 |
METHOD FOR REMOVING DEFECTS OF SINGLE CRYSTAL MATERIAL AND SINGLE CRYSTAL MATERIAL FROM WHICH DEFECTS ARE REMOVED BY THE METHOD |
摘要 |
A single crystal material (11) is subjected to hot isotropic pressure pressurization under a stabilized atmosphere of the single crystal material (11), at a pressure of 0.2 to 304 MPa, at a temperature not lower than 0.85 times the melting point according to an absolute temperature of the material (11) and for 5 min to 20 hr, and then is gradually cooled. The stabilized atmosphere of the material (11) is preferably an inactive gas atmosphere or a high-steam-pressure element vapor-containing atsmophere. The pressure is preferably 10 to 200 MPa. The material (11) is an ingot of Silicon, GaAs, InP, ZnS or ZnSe single crystal, or may be a block or wafer obtained by cutting the ingot. The above method can eliminate or disperse lattice defects such as hole type grow-in defects existing not only on the surface of but inside the material (11) independently of the size of the material (11). |
申请公布号 |
WO0018990(A1) |
申请公布日期 |
2000.04.06 |
申请号 |
WO1999JP05310 |
申请日期 |
1999.09.29 |
申请人 |
MITSUBISHI MATERIALS SILICON CORPORATION;HURUKAWA, JUN;SUDOU, MITSURU;NAKAI, TETSUYA;HUJIKAWA, TAKAO;MASUI, TAKUYA |
发明人 |
HURUKAWA, JUN;SUDOU, MITSURU;NAKAI, TETSUYA;HUJIKAWA, TAKAO;MASUI, TAKUYA |
分类号 |
C30B33/00;C30B33/02;H01L21/322;H01L21/324 |
主分类号 |
C30B33/00 |
代理机构 |
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代理人 |
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