Trench capacitor, especially for use with DRAMs, has dielectric material on trench side walls with conducting material, further dielectric material and further conducting material

摘要

The trench capacitor has a substrate (12) containing a trench, a dielectric material (22) on the trench side walls, a first conducting material (20) with a hollow region with outer peripheral sections on the first dielectric material to form a capacitor electrode, a second dielectric material (26) with a hollow region on the inner periphery of the first conducting material and a second conducting material (24) inside the hollow region in the second dielectric to form a capacitor electrode. Independent claims are also included for the following: (i) the production of a trench capacitor; and (ii) a semiconducting structure for a trench capacitor.