| 摘要 |
<p>A non-volatile semiconductor memory device being able to read, write and erase data at a much higher speed. The non-volatile semiconductor memory device used as a flash memory is composed of a memory cell (MCnk) array, a row address buffer (18), a row decoder (19), a row driver (20), a column address buffer (21), a column decoder (22), a column selector (23), a sense amplifier circuit (24), a writing circuit (25) and a control circuit (26), wherein selection and non-selection of memory cells (MCnk) at the time of reading is performed not by a control gate (27) of a memory transistor but by control on normal voltage of a switch transistor. <IMAGE></p> |
