| 摘要 |
PROBLEM TO BE SOLVED: To eliminate the influence of a magnetic field distribution and to uniformize the film quality of a thin film by forming the thin film while plural magnets provided on the side of a magnetron cathode are reciprocated at a specified relative moving rate along the almost facial direction to the face of the thin film to be formed for plural times. SOLUTION: A magnetron cathode 3 having magnets 5 arranged on the back side of a sputtering target 2 and a substrate A of a thin film to be formed are applied with a high frequency, and target molecules are released from the sputtering target 2 to form the thin film on the substrate A. In such a magnetron sputtering device, the film formation is executed to the face of the thin film to be formed while the magnets 5 are relatively moved along the almost facial direction at a relative moving rate of >=13 mm/s. It is preferable that the magnets 5 are provided by plural pieces and are reciprocated by a moving mechanism 4. It is preferable that the thin film is formed in such a manner that the film thickness of the 1st layer film is made to <=25 nm and successively, plural layers are laminated. |
