DOUBLE CHAMBER DEPOSITION SYSTEM AND PRODUCTION OF MAGNETIC RELUCTANCE SENSOR

摘要

PROBLEM TO BE SOLVED: To obtain an ion beam deposition system which reduces a production cost by increasing the wafer throughput of a deposition system. SOLUTION: A first wafer is moved to a first IBS deposition chamber 302 where reactive sputtering deposition is executed. The first wafer is thereafter moved to a second IBS deposition chamber 304 for the purpose of a metallic layer deposition process. At this time, a second wafer is inserted into the first IBS deposition chamber 302 and is subjected to the reactive sputtering deposition. The reactive sputtering deposition is executed simultaneously with the deposition of the metallic layer on the first wafer in the second IBS deposition chamber. After the metallic layer deposition of the first wafer ends, the first wafer is placed on a wafer stack (base) 360 outside the second IBS deposition chamber 304. The second wafer is moved to the second IBS deposition chamber 304. A third wafer is inserted into the system and the process flow is continuously executed.