发明名称 |
Process for fabricating a semiconductor opto-electronic component and component and matrix of components fabricated by this process |
摘要 |
An epitaxial deposition process is used to deposit materials that can be crystallized lattice matched to gallium arsenide onto an indium phosphide crystalline wafer. A material of this kind forms a metamorphic layer. Metamorphic layers of this kind constitute two semiconductor Bragg mirrors to form resonant cavities of surface emitting lasers of a matrix. This matrix is consolidated by a silicon support. Applications include optical telecommunications.
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申请公布号 |
US6046065(A) |
申请公布日期 |
2000.04.04 |
申请号 |
US19970928647 |
申请日期 |
1997.09.12 |
申请人 |
ALCATEL |
发明人 |
GOLDSTEIN, LEON;BRILLOUET, FRANCOIS;FORTIN, CATHRINE;JACQUET, JOEL;SALET, PAUL;LAFRAGETTE, JEAN LUC;PLAIS, ANTONINA |
分类号 |
G02F1/015;H01L21/203;H01L33/00;H01S5/00;H01S5/02;H01S5/024;H01S5/042;H01S5/183;(IPC1-7):H01L21/02 |
主分类号 |
G02F1/015 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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