METHOD FOR FABRICATING A STORAGE NODE OF CAPACITOR

摘要

PURPOSE: A method for forming a charge storage electrode of a capacitor is provided to increase an available surface area of a charge storage electrode by forming the charge storage electrode of a maze type. CONSTITUTION: An interlayer dielectric(6) is formed on a silicon substrate(1). A contact hole is formed by using a contact mask. The first undoped polysilicon and the oxide layer are formed sequentially thereon. A hemispherical polysilicon is formed on the oxide layer. The remaining hemispherical polysilicon is formed by etching partially the hemispherical polysilicon. The remaining oxide layer is formed by etching the oxide layer. A maze type polysilicon(8A) is formed by etching the first undoped polysilicon. The remaining oxide layer is removed. A doped polysilicon layer is deposited on the maze type polysilicon(8A). A photoresist layer is applied on the doped polysilicon layer. The photoresist layer is patterned by using a charge storage electrode mask. The interlayer dielectric layer(6) is exposed by etching the maze type polysilicon(8A). The second undoped polysilicon is deposited on the whole structure. A polysilicon spacer(14A) is formed by etching the second undoped polysilicon. A charge storage electrode(20) is formed by removing the doped polysilicon layer.