METHOD FOR FABRICATING A STORAGE NODE OF CAPACITOR

摘要

PURPOSE: A method for forming a charge storage electrode of a capacitor is provided to increase an available surface area of a charge storage electrode by forming a charge storage electrode as a structure of a double cylinder. CONSTITUTION: An interlayer dielectric(2) is deposited on a silicon substrate(1). The first polysilicon(3) and an oxide layer are laminated on the interlayer dielectric(2). A capacitor region is defined by applying and patterning the first photoresist layer. The exposed portions of the oxide layer and the first polysilicon(3) are etched and patterned by using the first photoresist layer. The patterned the first photoresist layer is removed. The second polysilicon is deposited on an upper portion of the whole structure. The second polysilicon spacer(6a) is formed at sidewalls of the patterned oxide layer and the first polysilicon(3). The third polysilicon is deposited on an upper portion of the whole structure. The second photoresist layer is applied thereon. An etching groove is formed by etching the third polysilicon, the oxide layer, and the first polysilicon(3). The second photoresist layer is removed. The fourth polysilicon is deposited on an upper portion of the whole structure. The fourth polysilicon spacer(10a) is formed at an inner sidewall of the etching groove. A contact hole is formed by etching a predetermined part of the interlayer dielectric(2). The fifth polysilicon is deposited on the upper portion of the whole structure. A double cylindrical charge storage electrode(20) is formed by removing the oxide layer and etching partially the interlayer dielectric(2).