FIELD EFFECT SEMICONDUCTOR DEVICE AND ITS MANUFACTURE

摘要

PROBLEM TO BE SOLVED: To provide a field effect semiconductor device in which the adhesion between an insulating film regulating a gate electrode end and gate metal is improved and yield is improved. SOLUTION: A field effect semiconductor device is provided with a source/ drain electrodes 6 arranged in the prescribed positions of a GaAs substrate 1, a channel region installed in GaAs between the source/drain electrodes 6, a gate electrode 11 which is between the source/drain electrodes 6 and which is brought into Schottky contact with a part of the channel region, and insulating film 7 which electrically insulate the surface of the GaAs substrate and the gate electrode 11 on both sides of the gate electrode 11. The gate electrodes 7 cover the surface of GaAs which constitutes the channel region and a part of the insulating films 7. The lowest metal layer 8 constituting the gate electrode 11 is covered by a second metal layer 9 which is superior in adhesion with the insulating films 7.