METHOD OF BONDING SUBSTRATE

摘要

PROBLEM TO BE SOLVED: To accomplish a method of bonding substrates which is applicable to a heat treatment in a temperature range of 1000 deg.C or lower. SOLUTION: This method of bonding substrates comprises the steps of: (a) interposing a non-crystalline silicon layer 14 between a first silicon substrate 10 and a second silicon substrate (single crystal silicon substrate) 20; and (b) subjecting the layer 14 to such a heat treatment that the layer 14 becomes a single crystal silicon layer 18 (or polysilicon layer).