| 摘要 |
1,107,008. Semi-conductor devices. SIEMENS A.G. 11 Nov., 1966 [11 Nov., 1965]. No. 50796/66. Heading H1K. Manganese is introduced into a semi-conductor body such as silicon, to provide recombination centres by exposing the body while heated to vapours of a manganese-oxygen compound. The compound may be one or more of MnO, MnO 2 , Mn 2 O 3 , or Mn 3 O 4 . The Figure shows silicon discs 6 in a quartz compoule containing a boat 5 filled with a manganese oxide; the compoule is heated to 960‹ C. for one hour. The process is particularly applicable to thyristors to reduce the recovery period after quenching.
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