| 摘要 |
PROBLEM TO BE SOLVED: To provide a silicon oxide film having a good step coverage by forming an insulating film, whose main component is silicon oxide by a plasma CVD method is a mixed atmosphere including organic silane having an ethoxy group, oxygen, a halogen element having a specific concentration, and carbon having a specific concentration or less. SOLUTION: A substance expressed by a chemical formula of Si(OC2H5)4 (tetreathoxysilane) or the like is desirable as organic silane which has an ethoxy group and is decomposed at the surface to form a silicon oxide film to provide a film having a superior step coverage. Also, a substance expressed by the chemical formula C2Cl3 (trichloroethylene) or the like is desirable as hydrogen carbide, including chlorine and is decomposed in a gas phase to combine with an alkali element to separate from a substrate, which improves the reliability of TFT or the like. An insulating film formed in this mixed atmosphere with a plasma CVD device includes a halogen element at a concentration of 1×1017 to 5×1020 cm3 and carbon at a concentration of 5×1019 cm3 or less.
|
