| 摘要 |
PROBLEM TO BE SOLVED: To precisely form fine patterns when a silylation is used in forming semiconductor patterns. SOLUTION: After a know novolak resist is rotatively coated as a lower layer resist 2 on a to-be-processed substrate (a), it is hard-baked at a high temperature (b), and a chemical amplification resist of a thin film is coated as an upper layer resist 3 on the hard-baked novolak resist (c). Thus, the resist of a two-layer structure is coated and formed, and the upper layer resist which is coated in a thin film is aligned (d) and developed (e), whereby upper layer resist patterns are formed, and next by utilizing a fact that only a residual upper layer resist which has not been dissolved in the alignment and development process is selectively silylated, the upper layer resist 3 is made a silylation (f), and next by use of the upper layer pattern which has been silylated as a mask, the lower layer resist is dry-developed with an oxygen plasma (g). |
