| 摘要 |
PROBLEM TO BE SOLVED: To prevent oxidation as much as possible from an emitter polysilicon growth preprocessing to polysilicon growth on the manufacture method of the emitter of an NPN transistor. SOLUTION: In a manufacture method using the growth furnace of an NPN transistor having the emitter of polysilicon 8, a process for introducing a substrate 1 to the preparation room of a structure integrated with the growth furnace at a low temperature, setting oxygen concentration in the preparation room to be almost equal to that in the growth furnace, introducing the substrate 1 to the growth furnace from the preparation room and executing prescribed molding work is given.
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