| 摘要 |
PROBLEM TO BE SOLVED: To provide a device and a method for growing a GaN-based semiconductor crystal film having good quality by inexpensive and simple constitution. SOLUTION: In a crystal growing device 20, a substrate 26 is placed in a reactive chamber 21 with its crystal growing surface down by a susceptor holder 27 and a susceptor 24 and a susceptor rod 22 is moved up and down to adjust a position between the substrate 26 and a gas supply pipe 28 arranged with its injection port toward the substrate 26. In the crystal growing device 20, current passes through an induction heating coil 29 to make the susceptor 24 a heating source to heat the substrate 26, and when a raw material gas including TMG, TMA, TMI, ammonia, hydrogen, and nitrogen is supplied from the gas supply pipe 28, the raw material gas flows outward in the radial direction from the center of the surface of the substrate 26 to always supply the fresh raw material gas to the crystal growing surface of the substrate 26 from the gas supply pipe 28 to grow a GaN-based semiconductor crystal having good quality on the surface of the substrate 26.
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