| 摘要 |
<p>In a conventional process of producing a nonvolatile ferroelectric memory (FeRAM), denatured layers are formed near the interface between a PZT and an electrode due to the diffusion of hydrogen used in the process or Pb contained in the PZT into the electrode. In addition, stress caused by the difference between the lattice constants of an electrode and a ferroelectric thin film is left at the interface between the electrode and the ferroelectric thin film. The decomposed films and the stress deteriorate the initial polarizing characteristic of the ferroelectric capacitor, and the deterioration is awful when the polarization of the memory is repeatedly inverted. In order to solve such a problem, a ferroelectric device of this invention having an upper electrode, a ferroelectric thin film, and a lower electrode is characterized in that the ferroelectric thin film is made of a perovskite oxide containing Pb and the upper and lower electrodes contain an intermetallic compound of Pt and Pb. An electronic apparatus comprising the ferroelectric element is also disclosed.</p> |
