| 摘要 |
Two requirements are imposed on ion implantation devices: 1) no neutral atoms should be present in the beam, because the trajectory and the velocity thereof cannot be influenced by electric or magnetic fields, and 2) the ion beam should land on the specimen to be treated with a small angular spread in order to avoid shading by irregularities during the doping in a substrate. To this end, the device according to the invention includes at least two successive deceleration stages (4, 6) the first deceleration stage (4), looking in the downstream direction, being arranged to decelerate the ion beam, to deflect the ion beam, and to form an intermediate crossover, whereas the second deceleration stage (6) is arranged to decelerate the ion beam further and to subject the beam to a converging effect. |
