发明名称 SEMICONDUCTOR DEVICE AND ITS MANUFACTURING METHOD
摘要 <p>A semiconductor device having a cobalt silicide film to which at least nickel or iron is added to prevent the film from having a high resistance due to the small thickness of the film.</p>
申请公布号 WO2000017939(P1) 申请公布日期 2000.03.30
申请号 JP1999005108 申请日期 1999.09.20
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