| 摘要 |
A ferroelectric material, especially as incorporated into a crystallographically oriented epitaxial ferroelectric cell, of Pb1-xLaxZryTi1-yO3 or Pb1-xNbxZryTi1-yO3 having a moderately high La or Nb content such that the unit cell is less tetragonal, that is, more nearly cubic, so as to reduce stress effects. A most preferred value of the c/a constant is about 1.01. Exemplary compositional ranges for x are 6 to 20 % for La and 3 to 15 % for Nb, when y is 20 %. The reduced polarizabilities voltages are consistent with integrated ferrroelectric memories operating at 3.0V and lower.
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