| 摘要 |
PROBLEM TO BE SOLVED: To avoid oxidation of a lower side electrode, and to inhibit formation of a hillock by a method, wherein the lower side electrode is formed onto a substrate and thermally treated rapidly, a ferroelectric film deposited on the lower side electrode is thermally treated and crystallized, and an upper side electrode is formed on the ferroelectric film. SOLUTION: An SiO2 film 32 is formed onto an Si substrate 21 through a thermal oxidation process, and a close contact film 33A comprising Ti and a lower side electrode film 33 composed of Pt are formed on the SiO2 film 32 through DC sputtering. After the lower side electrode film 33 is formed, a PLZT film 34 is formed. The whole is thermally treated in an oxygen atmosphere, and the PLZT film 34 is crystallized, while the inside of the PLZT film 34 is supplied with oxygen. An upper side electrode film 35 made of Pt is formed onto the PLZT film 34 through DC sputtering. Plasma etching is conducted to the upper side electrode film 35 and the PLZT film 34, and a desired ferroelectric capacitor 30 is shaped. Accordingly, the azimuth of a ferroelectric crystal can be oriented as desired. |
