| 摘要 |
PROBLEM TO BE SOLVED: To suppress the direction to generate a twin with good reproducibility and produce a large-sized single crystal wafer by setting the orientation of a growth plane of a seed crystal at the orientation tilted within the range of a specific angle from 111)B to any of three <100> directions adjacent to the 111}B. SOLUTION: The range of a tilted angle is >=2 and <=14 deg. and the orientation of 111)B refers to any of four orientations of (-111)B, (1-11)B, (11-1)B and (-1-1-1)B. The B indicates that the plane is the B plane (Te plane). A crystal can be grown from a solution consisting essentially of elements constituting the crystal to afford the homogeneous crystal of a high purity. In the case of the crystal which is CdTe or a mixed crystal such as Cd1-xZnxTe consisting essentially of Cd and Te, the crystal is respectively grown from a solution consisting essentially of the Cd and Te and containing >=50% Te expressed in terms of molar fraction or a solution consisting essentially of the Cd, Te and Zn and containing >=50% Te expressed in terms of the molar fraction.
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