| 摘要 |
PROBLEM TO BE SOLVED: To reduce the cost, to prevent the change and deformation of the microstructure of a target material and to improve its yield by integrating a target material used in a sputtering method and a backing plate of Al, Cu or the like by frictional pressure welding. SOLUTION: For forming a satisfactory thin film, a target material of pure Ti or the like is subjected to cold working at a high working ratio and is thereafter subjected to heat treatment at a low temp. to make the particles in the microstructure superfine ones. This target material is joined and integrated with a backing plate of Al, Cu or the like to form a target, and sputtering at a high temp. under high voltage is executed to attain a high film forming rate. At this time, the target material and the backing plate are integrated by frictional pressure welding. This frictional pressure welding is executed in such a manner that, e.g. joining materials are pressurized to each other while being relatively moved by rotation or the like, the joining faces are brought into contact with, and by the frictional heat, the materials are joined. In this way, the time and range of the temp. increase can be reduced and localized.
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