Wiring structure having rotated wiring layers

摘要

An improved wiring structure to minimize coupling between the wiring in one metalization layer of an integrated circuit chip and the wiring in an adjoining metalization layer is described. Wiring in one layer is rotated by an angle a1 with respect to the direction of the wiring in the adjoining layer. By successively rotating all the conductors of one wiring layer with respect to the wiring of the next layer, the capacitive and inductive coupling between conductors in the various layers is minimized, thereby improving the overall high-frequency performance of the chip.