发明名称 Process for forming a semiconductor device
摘要 A buffer film (154, 164) is formed over an underlying film (153, 162) to protect that underlying film (153, 162) from damage during a removal sequence, such as polishing. Scratches, gouging, smearing that can occur to the underlying layer (153, 162) are less likely to occur because of the presence of the buffer film (154, 164). In some embodiments, an insulating film (162) is to be protected. The buffer film (164) is formed over the insulating film (162), and the insulating and buffer films (162 and 164) are patterned. During a subsequent conductive layer polishing operation in an embodiment, most of the buffer film (164) is removed. In still another embodiment, a buffer film (154) is formed over a conductive layer (153) to protect it during "gap fill" process sequence. Although residual portions of the buffer film (154, 164) are usually removed, in some instances, those residual portions can remain if there are no significant adverse affects.
申请公布号 US6043146(A) 申请公布日期 2000.03.28
申请号 US19980122709 申请日期 1998.07.27
申请人 MOTOROLA, INC. 发明人 WATANABE, JOY KIMI;STANKUS, JOHN JOSEPH
分类号 H01L21/02;H01L21/768;H01L23/532;(IPC1-7):H01L29/06 主分类号 H01L21/02
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