Method and device for cutting and mirror finishing single crystal silicon carbide

摘要

The present invention comprises: a metal bond grind stone having a flat plate portion 10a and a tapered portion 10b; an electrode 13 opposed to the metal bond grind stone with a gap therebetween; voltage applying means 12 for applying a direct-current pulse voltage between the metal bond grind stone and the electrode; conductive liquid supplying means 14 for supplying a conductive liquid 15 between the metal bond grind stone and the electrode; and grind stone moving means 16 for moving the metal bond grind stone in a direction orthogonal to the shaft center thereof, and an ingot 1 of a single crystal SiC is thereby cut at the tapered portion 10b of the metal bond grind stone and the cut surface is then specular-worked at the flat plate portion 10a.