FABRICATION METHOD OF SEMICONDUCTOR INTEGRATED CIRCUIT DEVICE

摘要

PURPOSE: The method can drop the aspect ratio of a contact hole and can prevent the delamination or the expansion of a cap insulation film after the formation of the cap insulation film. CONSTITUTION: The cap insulation film is a stacked structure of a silicon oxide film and a silicon nitride film formed on the silicon oxide film. In the formation of the contact hole, the etching is performed in the condition that the silicon oxide film part is etched more easily than the silicon nitride film part, and the etching process is terminated at the point that the silicon nitride film is revealed. By performing the etching continuously in the condition that the silicon oxide film part is etched more easily than the silicon nitride film part, the contact hole which a semiconductor substrate(1) reveals is formed.