| 摘要 |
PURPOSE: The transistor is made to remove the overlay tolerance from the effective transistor width. CONSTITUTION: The present invention is intended to fabricate a transistor in the fabrication atmosphere of removing the overlay tolerance from a body contacted SOI(Silicon On Insulator) transistor and an effective transistor width. In the top, the effective width is determined by RX, but in the bottom where a source and a drain are connected each other the effective width is determined by PC. Because these structure is used as a top of the SOI transistor and the bottom of the transistor is a mirror-image of the top, the effect due to the overlay of PC to RX is opposite in the top and in the bottom, and the top and the bottom are connected by a common body portion. In the bottom, the "upper" misalignment increases the device width and the "lower" misalignment decreases the device width. Thus, in case that PC is misalignment to RX, any width error generated in the top of the transistor is cancelled exactly by the bottom of the transistor.
|
