| 摘要 |
PURPOSE: A water phosphatic etching solution is provided to improve etching speed and a selection degree of etching of a nitrogen silicon film, for a dioxide nitrogen film in a complicated semiconductor element of nitration silicon-oxide silicon. CONSTITUTION: A method for etching of a semiconductor element etches the semiconductor element in heated water etching solution, composed of a silicon component, dissolved easily in the water etching solution. The method comprises the steps of: performing the etching in the temperature of approximately 180 degrees centigrade or approximately 150 degrees centigrade; the silicon component existing in the amount of approximately 16 ppm or approximately 500 ppm; the silicon component existing in the amount of approximately 100 or approximately 200; the silicon being six fluorine silicon.
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