| 摘要 |
<p>A method for heat-treating a silicon wafer in a reducing atmosphere by using an RTA apparatus. By the method, especially, the microroughness of the wafer surface is small, thereby the electric characteristics such as the dielectric breakdown voltage of the oxide film and the carrier mobility are enhanced, slippage and heavy metal contamination are prevented, the yield and productivity are improved, and the manufacturing cost is reduced. The method for heat-treating a silicon wafer in a hydrogen-containing reducing atmosphere by using a rapid heating/cooling apparatus is characterized in that the natural oxide film on the silicon wafer is removed, and then the silicon wafer is heat-treated in an atmosphere of 100 % hydrogen concentration or an inert gas atmosphere containing 10 % of hydrogen by using a rapid heating/cooling apparatus.</p> |
