Method for fabricating a capacitor utilizing hemispherical grain silicon

摘要

A method of making a DRAM cell capacitor comprises forming an insulating layer 20 on a semiconductor substrate 10, forming a contact hole in the insulating layer, forming a conductive layer in the contact hole and on the insulating layer, patterning the conductive layer to form a storage electrode 27a, forming an HSG film 80 having a transition region adjacent the electrode and crystallising the transition region. The storage electrode is formed of doped amorphous silicon before seeding crystal nuclei are deposited by LPCVD. Annealing is then performed to grow the HSG film with the transition or neck region between the grains and the amorphous surface layer. The transition region is then crystallised by annealing at 600{C to 650{C.