发明名称 VACUUM TREATMENT METHOD
摘要 PROBLEM TO BE SOLVED: To facilitate the adaptation to the automation of a semiconductor production line by providing a carrying means for exchanging a sample among a cassette, a carry-in chamber, and a carry-out chamber in a space being surrounded by a U-shaped vacuum chamber. SOLUTION: A wafer 10 in a cassette 1a is pulled out by a transfer device 7 and is carried into a load lock chamber 3 through an isolation valve 6a. The isolation valve 6a in the load lock chamber 3 is closed, vacuum evacuation is made, an isolation valve 6b is opened, and the wafer 10 is carried into an etching chamber 5 for performing etching treatment. In the meantime, the pressure in the load lock chamber 3 is returned to atmospheric pressure while the isolation valves 6a and 6b are closed, the isolation valve 6a is opened, and a second wafer is carried in for evacuation. The first wafer 10 is carried to an unload lock chamber 4 by opening an isolation valve 6c after etching is completed, the pressure is returned to atmospheric pressure, and the wafer 10 is returned into a cassette 1a through an isolation valve 6d. The isolation valve 6c is closed, the second wafer is carried in, and the similar treatment as the first treatment is made.
申请公布号 JP2000082697(A) 申请公布日期 2000.03.21
申请号 JP19990159014 申请日期 1999.06.07
申请人 HITACHI LTD 发明人 KATO SHIGEKAZU;TAMURA NAOYUKI;NISHIHATA KOJI;ITO ATSUSHI;TSUBONE TSUNEHIKO
分类号 H01L21/302;B01J3/02;C23C14/56;C23C16/54;C23F4/00;H01L21/3065;H01L21/677;H01L21/68;(IPC1-7):H01L21/306 主分类号 H01L21/302
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