| 摘要 |
PROBLEM TO BE SOLVED: To provide new structure of a ferroelectric device that prevents deterioration of ferroelectric characteristics, and at the same time reduces a leak current. SOLUTION: In a ferroelectric device, for example, a ferroelectric film 105 and electrodes 103 and 106 are formed via a buffer layer 104 on an electrode being formed on the surface of a substrate (1), the electrode 106 is formed via the buffer layer 104 on the ferroelectric film 105 being formed on the surface of the electrode being formed on the surface of the substrate (2), and the buffer layer 104 is formed as an intermediate layer in the ferroelectric film 105 being formed on the surface of the electrode being formed on the surface of the substrate (3). |
