| 发明名称 |
Semiconductors having defect denuded zones |
| 摘要 |
A method for processing a semiconductor substrate to form a denuded zone therein. The method includes providing a semiconductor substrate having an oxygen concentration in a region of the substrate adjacent to a surface of such substrate. A trench is formed in the surface of the substrate. Subsequent to the formation of the trench, reducing the oxygen concentration within the region.
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| 申请公布号 |
US6040211(A) |
申请公布日期 |
2000.03.21 |
| 申请号 |
US19980093796 |
申请日期 |
1998.06.09 |
| 申请人 |
SIEMENS AKTIENGESELLSCHAFT |
发明人 |
SCHREMS, MARTIN |
| 分类号 |
H01L27/04;H01L21/208;H01L21/322;H01L21/334;H01L21/76;H01L21/822;H01L21/8242;H01L27/108;(IPC1-7):H01L21/823 |
主分类号 |
H01L27/04 |
| 代理机构 |
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代理人 |
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| 主权项 |
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| 地址 |
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