| 摘要 |
PROBLEM TO BE SOLVED: To provide a manufacturing method of a semiconductor device which corresponds to fining of semiconductor device and enables formation of a contact hole wherein deterioration of isolation characteristic is restrained. SOLUTION: The manufacturing method of a semiconductor device includes a process for laminating a second layer 105 and a third layer one by one to cover a transfer gate 104 formed on a first layer 101, a process for etching a third layer by using the second layer 105 as an etching stopper, a process for depositing an insulating material film 112, and a process for forming a contact hole 113 by exposing the first layer 101 by etching an insulating material film and the second layer 105 therebelow anisotropically. |
