| 摘要 |
PROBLEM TO BE SOLVED: To stabilize the electrical characteristics of a ferroelectric device. SOLUTION: In a ferroelectric device, for example, a phosphorus glass layer is formed on the surface of a ferroelectric film or removed after formation thereof (1), silicon nitride films 204 and 206 are formed on the surface of a ferroelectric film 205 (2), an electrode made of a titanium nitride film is formed at least at one place on the surface of the ferroelectric film (3), and two electrodes are formed oppositely at least on one main surface of the ferroelectric film, thus preventing the lack of oxygen caused by capturing an alkali metal movable ion in the ferroelectric and also by preventing discharge of oxygen, preventing segregation of composition elements, preventing deterioration in characteristics by making equal the interface level density between the electrode and the ferroelectric, and hence providing the ferroelectric device with secured electric characteristics, a long life, and stable characteristics. |
