Semiconductor component, e.g. containing double-diffused metal-oxide semiconductor transistors, has a region for creating a double drift field from an underlying substrate and from an overlying semiconductor layer towards the region

摘要

A semiconductor component, with a region (22) for creating a drift field (E1, E2) from an underlying substrate (21) and from an overlying semiconductor layer (2) towards the region, is new. A semiconductor component, comprising a first conductivity type semiconductor substrate (21) bearing a semiconductor layer (2) containing different conductivity type zones (4, 5, 7, 8, 10, 18), has a semiconductor region (22) which is located between the substrate and the layer and which creates a drift field (E1, E2) from both the substrate and the layer to the region. Preferred Features: A double-diffused metal-oxide semiconductor (DMOS) transistor with a guard ring (18) is provided in the layer (2). The substrate (21), the region (22) and the guard ring (18) are p-doped.